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APTDF200H170G
Diode Full Bridge Power Module
+
AC1 AC2
VRRM = 1700V IC = 200A @ Tc = 55C
Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers
Features * * * * * * * Benefits
AC2 + -
-
Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * * * * *
AC1
Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant
Absolute maximum ratings
Symbol VR VRRM IF(A V) IF(RMS) IFSM
Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Tc = 25C Tc = 55C Tj = 25C
Max ratings 1700 240
Unit V
RMS Forward Current Non-Repetitive Forward Surge Current
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-3
APTDF200H170G - Rev 1
June, 2006
200 250 600
A
APTDF200H170G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic VF IRM Diode Forward Voltage Maximum Reverse Leakage Current Test Conditions IF = 200A VR = 1700V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Tj = 25C IF = 200A VR = 900V
di/dt = 2000A/s
Min
Typ 2.2 2.1
Max 2.5 350 600
Unit V A
Dynamic Characteristics
Symbol Characteristic trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
Test Conditions Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ 572 704 40 70 140 200
Max
Unit ns C A
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 3500 -40 -40 -40 3 2
Typ
Max 0.18 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
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2-3
APTDF200H170G - Rev 1
June, 2006
APTDF200H170G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W) 0.16 0.12 0.08 0.04 0.9 0.7 0.5 0.3 0.1 0.05 0.0001
Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10
0 0.00001
Forward Current vs Forward Voltage 500 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 400 300 200 100 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF , Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge
TJ=125C VR =900V 400 A 200 A TJ=125C TJ=25C
Trr vs. Current Rate of Charge
800 700 600 500 400 300 200 0 3000 6000
-diF /dt (A/s) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A)
200 A 100 A 400 A TJ=125C V R=900V
TJ=25C
9000
12000
160 140 120 100 80 60 40 0
800 700 600 500 400 300 200 100 0 3000 6000
-diF/dt (A/s)
TJ=125C V R=900V 200 A 400 A 100 A
100 A
3000
6000
-diF/dt (A/s)
9000
12000
9000
12000
Max. Average Forward Current vs. Case Temp. 300
250
IF(AV) (A)
Duty Cycle = 0.5 TJ=150C
200 150 100 50 0 0 25 50 75 100 125 150
Case Temperature (C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
3-3
APTDF200H170G - Rev 1
June, 2006

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